MSE07PB, mse07pd, mse07pg, mse07pj www.vishay.com vishay general semiconductor revision: 09-apr-14 1 document number: 87795 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount esd capability rectifier typical applications general purpose, polarity protection, and rail-to-rail protection in both consumer and automotive applications. features ? very low profile - typical height of 0.65 mm ? ideal for automated placement ? oxide planar chip junction ? low forward voltage drop, low leakage current ? esd capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? mechanical data case: microsmp ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade ? base p/nhm3 - halogen-free, rohs-compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms primary characteristics i f(av) 0.7 a v rrm 100 v, 200 v, 400 v, 600 v i fsm 20 a v f at i f = 0.7 a (t a = 125 c) 0.83 v i r 1 a t j max. 175 c package microsmp diode variatio ns single die microsmp esmp ? series top view bottom view available maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol MSE07PB mse07pd mse07pg mse07pj unit device marking code 07b 07d 07g 07j max. repetitive peak reverse voltage v rrm 100 200 400 600 v max. average forward rectified current (fig. 1) i f(av) 0.7 a peak forward surge curr ent 10 ms single half ? sine-wave superimposed on rated load i fsm 20 a operating junction and storage temperature range t j , t stg -55 to +175 c electrical characteristics (t a = 25 c, unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 0.7 a t a = 25 c v f (1) 0.94 1.08 v t a = 125 c 0.83 0.95 reverse current rated v r t a = 25 c i r (2) -1.0 a t a = 125 c 3.7 50 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 780 - ns typical junction capa citance 4.0 v, 1 mhz c j 5-pf
MSE07PB, mse07pd, mse07pg, mse07pj www.vishay.com vishay general semiconductor revision: 09-apr-14 2 document number: 87795 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambi ent and junction to lead mounted on pcb with 6.0 mm x 6.0 mm copper pad areas. r ? jl is measured at the terminal of cathode band. note (1) aec-q101 qualified ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics thermal characteristics (t a = 25 c, unless otherwise noted) parameter symbol MSE07PB mse07pd mse07pg mse07pj unit typical thermal resistance r ? ja (1) 110 c/w r ? jl (1) 30 r ? jc (1) 40 immunity to electrical static di scharge to the following standards ? (t a = 25 c, unless otherwise noted) standard test type test co nditions symbol class value aec-q101-001 human body model (con tact mode) c = 100 pf, r = 1.5 k ? v c h3b > 8 kv ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode mse07pj-m3/89a 0.006 89a 4500 7" diam eter plastic tape and reel mse07pjhm3/89a (1) 0.006 89a 4500 7" diameter plastic tape and reel 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 255075100125 175 150 lead temperature (c) average forward rectified current (a) t l mea s ured at the cathode band terminal pcb mount r thjl = 30 c/w 0 0 0.1 0.1 0.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.4 0.5 0.6 0.7 0.8 average forward current (a) average power lo ss (w) d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
MSE07PB, mse07pd, mse07pg, mse07pj www.vishay.com vishay general semiconductor revision: 09-apr-14 3 document number: 87795 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) 10 1 0.1 0.01 0.4 0 0.8 1.2 1.6 2.0 2.4 t j = 150 c t j = 125 c t j = 25 c t j = 50 c t j = 75 c t j = 100 c t j = 175 c 100 10 1 0.1 0.001 10 20 30 40 50 60 70 80 90 100 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 0.01 t j = 150 c t j = 125 c t j = 25 c t j = 75 c t j = 100 c t j = 175 c rever s e voltage (v) junction capacitance (pf) 10 1 0.1 1 10 100 t - pul s e duration ( s ) 1000 1 0.01 1 10 1000 100 0.1 100 10 tran s ient thermal impedance (c/w) junction to ambient 0.106 (2.70) 0.091 (2.30) 0.055 (1.40) 0.047 (1.20) cathode band micro s mp 0.030 (0.75) 0.022 (0.55) 0.030 (0.75) 0.022 (0.55) 0.059 (1.50) 0.043 (1.10) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.020 (0.50) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.079 (2.00) 0.032 (0.80) 0.032 (0.80) mountin g pad layout 0.029 (0.73) 0.025 (0.63)
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